PART |
Description |
Maker |
STI30NM60ND STP30NM60ND STW30NM60ND STF30NM60ND ST |
N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh?/a> II Power MOSFET (with fast diode) N-channel 600V - 0.11Ω - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh II Power MOSFET (with fast diode) N-channel 600V - 0.11楼? - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh垄芒 II Power MOSFET (with fast diode) N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh⑩ II Power MOSFET (with fast diode)
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STMicroelectronics
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IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
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IRF[International Rectifier]
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SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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FDZ4670 |
N-Channel PowerTrench?MOSFET BGA 30V, 25A, 2.5mΩ N-Channel PowerTrench㈢MOSFET BGA 30V, 25A, 2.5mヘ
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Fairchild Semiconductor
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100JB12L 35MB100A 35MB10A 35MB120A 100JB10L 100JB1 |
10 to 35 Amp Rectifier Bridges V(rrm): 400V; 25A rectifier bridge V(rrm): 1200V; 35A rectifier bridge V(rrm): 100V; 25A rectifier bridge V(rrm): 1000V; 25A rectifier bridge V(rrm): 1000V; 10A rectifier bridge V(rrm): 100V; 10A rectifier bridge V(rrm): 400V; 10A rectifier bridge V(rrm): 1200V; 10A rectifier bridge V(rrm): 50V; 10A rectifier bridge V(rrm): 200V; 10A rectifier bridge V(rrm): 600V; 10A rectifier bridge V(rrm): 800V; 10A rectifier bridge V(rrm): 1200V; 25A rectifier bridge V(rrm): 1000V; 35A rectifier bridge V(rrm): 50V; 25A rectifier bridge V(rrm): 600V; 25A rectifier bridge
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IRF[International Rectifier]
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STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
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SGS Thomson Microelectronics STMicroelectronics 意法半导
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HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S |
600V, SMPS Series N-Channel IGBT From old datasheet system 600V/ SMPS Series N-Channel IGBT 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB 600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
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INTERSIL[Intersil Corporation] Intersil, Corp. Fairchild Semiconductor, Corp.
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F1826HD600 F1826CCD600 F1856HD600 F1856CAD1400 F18 |
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|25A I(T) COMMON CATHODE DIODE ARRAY|MODULE-S THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|55A I(T) COMMON ANODE DIODE ARRAY|MODULE-S 共阳极二极管阵列|模块 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.4KV V(RRM)|40A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.4KV五(无线资源管理)| 40A条疙(T THYRISTOR MODULE|SCR DOUBLER|1.4KV V(RRM)|40A I(T) 晶闸管模块|可控硅倍增| 1.4KV五(无线资源管理)| 40A条疙T THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|25A I(T)
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MtronPTI
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FQT1N60C FQT1N60CTF-WS |
N-Channel QFETMOSFET 600V, 0.2A, 11.5 N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
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Fairchild Semiconductor
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FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor]
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